Abstract
The Sn/Pb alloy perovskites is prepared by mixing stoichiometric amounts of CH3NH3I, PbI2, and SnI2 in an aqueous HI/H3PO2 solvent mixture. The CH3NH3SnxPb1-xI3 crystal and film produce the same perovskite with no traceable byproducts. The fundamental differences between the sensitized solar cell and heterojunction device based on CH3NH3SnxPb1-xI3, especially the device structures, the current density-voltage (J-V) curves and the lifetime vs voltage (τ-V) curves are investigated. The short-lived charge carriers inhabit these Sn/Pb alloy perovskites to operate efficiently in the sensitized device and heterojunction device because the charges could not be extracted from the device before significant recombination occurs. Such a short lifetime may be attributed to fast recombination or the self-doped carriers in Sn/Pb alloy perovskite, resulting in lower short circuit current (Jsc ) and power conversion efficiency (PCE).
© 2015 Optical Society of America
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