Abstract
The choice of technology for guided wave optical switches must consider three major issues. Firstly the transparency of the data path will be determined by the waveguide and switch element optical characteristics. Secondly the switching speed of the elements, ranging from mS for optomechanical switches to sub-nS for electro-optical and carrier depletion switches, will be determined by the physical mechanism and by the electrical packaging. Switch speed is of especial importance when high data rates are being switched. These issues have been explored for lithium niobate, leading to the demonstration of a 16×16 guided wave electro-optic space switch [1]. The third issue, the monolithic integration of the optoelectronic circuit elements required for routing control and optical signal conditioning, can only be accomplished using a semiconductor technology.
© 1991 Optical Society of America
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