Abstract
In recent years, study has been made of the photorefractive effect in semi-insulating GaAs, both Cr- doped(1,3,4) and with EL2 centres(2). The motivation for examining this effect has been the faster response time of GaAs compared with other photorefractive materials such as Bi12SiO20 or BaTiO3 (5). Also, its operation at near infra-red wavelengths with semiconductor lasers opens up possibilities of incorporating photorefractive materials in integrated optical systems(6).
© 1987 Optical Society of America
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