Comparison Between Ge And InGaAs APDs in the 1 To 2 µm Wavelength Range

Tamer F. Refaat; M. Nurul Abedin; Upendra N. Singh

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications, Systems and Technologies
Technical Digest (CD) (Optica Publishing Group, 2005),
paper JThI6

Comparison Between Ge And InGaAs APDs in the 1 To 2 µm Wavelength Range

Tamer F. Refaat, M. Nurul Abedin, and Upendra N. Singh

Photonic Applications Systems Technologies Conference 2005

Baltimore, Maryland United States
23–28 May 2005
ISBN: 1-55752-770-9

From the session
CLEO/PhAST Joint Symposium on Active Remote Sensing II (JThI)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
T. F. Refaat, M. N. Abedin, and U. N. Singh, "Comparison Between Ge And InGaAs APDs in the 1 To 2 µm Wavelength Range," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications, Systems and Technologies, Technical Digest (CD) (Optica Publishing Group, 2005), paper JThI6.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Save article

Abstract

Ge and InGaAs avalanche photodiodes are suitable for lidar application at 1, 1.3 and 1.55 µm wavelengths. A comparison between the two devices is presented, which addresses quantum efficiency, responsivity, dark current, noise and detectivity.

PDF Article

Previous Article Next Article