Abstract
AC-Stark effects have been studied experimentally and theoretically for some time. In the case of semiconductors, the ac-Stark shift has been studied more recently.1,2 We discuss new experiments in which the low-intensity and high-intensity limits of the ac-Stark shift in GaAs quantum wells are investigated. In addition, we study the effects of application of a dc-bias field perpendicular to the layers, so that the dc quantum-confined Stark effect interacts with the ac-Stark shift.
© 1989 Optical Society of America
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