Abstract
Defect energy levels within the band gaps of semiconductor crystals can strongly influence electronic and optical properties. While many techniques exist that can characterize and identify defects within doped semiconductors, few techniques are available for defect characterization in the technologically important semi-insulating materials. The photorefractive effect in semi-insulating semiconductors originates from the redistribution of space-charge trapped at deep levels that occurs during the writing of volume holograms. Optical mixing experiments, therefore, directly probe the presence of deep level defects and can be used as characterization tools of semi-insulating material. A full understanding of deep level behavior permits optimization of material for photorefractive applications.
© 1989 Optical Society of America
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