Abstract
Surface-emitting semiconductor lasers show great-promise as compact light sources for optoelectronics, optical communication and computing, phased array optical radar, and optical storage. Their small size, short optical cavity, and possibility for integration with monolithic electronics makes them particularly attractive for high-speed optoelectronics applications. Early measurement of the modulation characteristics of these lasers1 indicates that speeds exceeding 10 GHz may be easily achievable. We have demonstrated a vertical-cavity, junction-up surface-emitting laser with cw output power in the 1-2 mW range and a modulation bandwidth approaching 5 GHz.
© 1991 Optical Society of America
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