Abstract
The use of electric fields to control the output of semiconductor quantum well lasers might provide a means of circumventing carrier lifetime limitations on modulation speed. Field-effect lasers might also be attractive candidates as basic active components for optical logic. Although electric-field-controlled light emission was proposed some time ago [1,2], electric-field-controlled lasers in which lasing occurred in the presence of fields has not been demonstrated until now. Field screening due to high threshold carrier densities seems to have been the main obstacle.
© 1992 Optical Society of America
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