Abstract
We have performed systematic femtosecond time-resolved bleaching measurements on heavily n-doped (Nd ~ 3.3 × 1018 cm−3) GaAs at temperatures of 300 and 14 K at very low injected-carrier densities (~ 6 × 1015 ≤ Ninj ≤8 × 1016 cm−3). For 2-eV excitation the electrons injected from the heavy- and light-hole valence bands scatter out of their initial states because of plasmon-emission processes on a time scale at least as fast as the average intervalley scattering time. This is illustrated in Fig. 1, which shows a number of transient absorption curves for n-doped GaAs. None of the curves exhibits the instant drop and a rapid (~35-fs) recovery spike characteristic of such a signal in undoped GaAs.
© 1993 Optical Society of America
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