Abstract
Common to all recently demonstrated optoelectronic sources of pulsed terahertz radiation has been the problem of properly characterizing the source with receivers of limited bandwidths. To date, the broadest- bandwidth receiver has used ion-implanted, silicon-on-sapphire (SOS) photoconductive switches.1,2 Here, we report a different type of photoconductive receiver with unprecedented time resolution. This receiver uses a new composite photoconductor [shown in Fig. 1(a)] that consists of an active layer of ion-implanted polysilicon on a 0.7-μm-thick thermal oxide on a silicon substrate.
© 1993 Optical Society of America
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