Abstract
Excitons in semiconductor microcavities are a contemporary subject that has produced a number of experimental demonstrations of the impact of enhanced coupling between extended electronic states in a crystalline solid and resonant electromagnetic waves [1],[2]. These demonstrations have been limited to GaAs-based semiconductor systems, in large part due to ready access to quality epitaxial material. Strong recent progress has, however, also occurred in wide-gap II-VI semiconductors, driven by the prospects of new compact blue-green diode lasers, and a wide range of heterostructure designs is now available to test also other ideas such as microcavity effects. One important difference between the GaAs-based and ZnSe-based quantum well systems is that a considerably larger oscillator strength can in principle be obtained in the latter case where the excitan binding energy can satisfy the condition Ex> hωLO, kT (at room temperature). We demonstrate here the implications of such exciton strength in initial experiments in a II-VI microcavity.
© 1995 Optical Society of America
PDF ArticleMore Like This
Anthony M. Johnson
TPLS2 Inaugural Forum for the Research Center for Optical Physics (RCOP) 1993
R. André, F. Boeuf, Le Si Dang, M. Richard, R. Romestain, J. Bleuse, and M. Müller
QThA3 Quantum Electronics and Laser Science Conference (CLEO:FS) 2003
Carlo Piermarocchi, Vincenzo Savona, Antonio Quattropani, and Paolo Schwendimann
QThB5 Quantum Electronics and Laser Science Conference (CLEO:FS) 1996