Abstract
During the past two years significant performance advances1-9 have been achieved in selectively oxidized vertical- cavity surface emitting lasers (VCSELs), many of which have established overall benchmark records for semiconductor lasers. For example, Fig. 1 shows a wall plug efficiency (at 1 nW output) of greater than 50%3 and threshold currents less than 10 μA have been obtained from VCSELs containing a stable and low refractive index Al-oxide formed from AlGaAs, These oxidized VCSEL structures leverage the high oxidation selectivity of Al(Ga)As and the capability of forming buried oxide layers within the epilayers of the laser.2 Here we review the advances made in device fabrication, structure and performance of selectively oxidized VCSELs.
© 1996 Optical Society of America
PDF ArticleMore Like This
Alan Mar, Kevin L. Lear, Kent D. Choquette, Sean P. Kilcoyne, and Kent M. Geib
CMH4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1996
H. Bissessur, T. Mukaihara, M. Abe, F. Koyama, and K. Iga
18P.38 Optoelectronics and Communications Conference (OECC) 1996
K. M. Geib, K. D. Choquette, H. C. Chui, and H. Hou
CThK40 Conference on Lasers and Electro-Optics (CLEO:S&I) 1996