Abstract
Compared with GaAs, little is known about hot-electron dynamics in narrow-gap semiconductors like InAs. In these materials the conduction band is much more strongly nonparabolic, and both the effective electron mass and the electron-phonon coupling constant are smaller compared with values for GaAs. To study hot-electron dynamics in the conduction band of these materials, ultrashort mid-or far-infared pulses are necessary to avoid the unwanted creation of electron- hole pairs by interband one-, two-, or even three-photon excitation.1
© 1996 Optical Society of America
PDF ArticleMore Like This
H.P.M. Pellemans, W. Th. Wenckebach, and P. C. M. Planken
ThC.2 International Conference on Ultrafast Phenomena (UP) 1996
P.C.M. Planken, H.P.M. Pellcmans, and W.Th. Wenckebach
QTuF1 European Quantum Electronics Conference (EQEC) 1996
D. Oepts, G.M.H. Knippcls, A.F.G. Van Der Meer, and P.W. Van Amersfoort
QWA5 European Quantum Electronics Conference (EQEC) 1996