Abstract
We have investigated freestanding InGaAs/GaAs quantum wares with lateral sizes between 29 run and 84 nm by means of time integrated degenerate four-wave musing in the two-pulse self-diffraction configuration. The wires were fabricated by use of high-resolution electron beam lithography and a Cl2/Ar etching process on an In0.135Ga0.865As/GaAs multiple quantum well. The well widths were 3 mu and the widths of the separating harriers were 60 nm.
© 1997 Optical Society of America
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