Abstract
The ability of ferroelectric materials such as Pb(ZrxT1−x)O3 (PZT) piezoceramics to switch from one stable polarization state to another forms the basis of a new thin film technology for data storage.1 Thin PZT films are used in prototype nonvolatile ferroelectric random-access memory (NVFRAM) and dynamic random-access memory (DRAM) devices.
© 1999 Optical Society of America
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