Abstract
We describe ultrafast optical measurements of electron spin relaxation in InAs/GaSb superlattices with band gaps in the mid-infrared. Quantum structures comprised of semiconductors such as InAs and GaSb, with lattice constants of ~6.1-Å, are currently being explored for application to a variety of advanced electronic and optoelectronic devices, including resonant-interbandtunneling diodes and mid-infrared lasers and detectors.
© 2001 Optical Society of America
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