Abstract
We observe a fundamental difference in the influence of doping electrons and optically excited electrons on the electron g-factor and spin relaxation time T2* in undoped and n-doped bulk GaAs.
© 2003 Optical Society of America
PDF ArticleWe observe a fundamental difference in the influence of doping electrons and optically excited electrons on the electron g-factor and spin relaxation time T2* in undoped and n-doped bulk GaAs.
© 2003 Optical Society of America
PDF Article