Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier; A. Thränhardt; T. Meier; H. Grüning; P. J. Klar; W. Heimbrodt; S. W. Koch; W. W. Chow; J. Hader; J. V. Moloney

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
Technical Digest (CD) (Optica Publishing Group, 2005),
paper JTuC92

Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier, A. Thränhardt, T. Meier, H. Grüning, P. J. Klar, W. Heimbrodt, S. W. Koch, W. W. Chow, J. Hader, and J. V. Moloney

Quantum Electronics and Laser Science Conference 2005

Baltimore, Maryland United States
22–27 May 2005
ISBN: 1-55752-770-9

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Poster Session I (JTuC)

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C. Schlichenmaier, A. Thränhardt, T. Meier, H. Grüning, P. J. Klar, W. Heimbrodt, S. W. Koch, W. W. Chow, J. Hader, and J. V. Moloney, "Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optica Publishing Group, 2005), paper JTuC92.

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Abstract

Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In_0.23Ga_0.77As/GaN_xAs₁₋_x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

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