Probing Impurity Migration Effects in Si-Doped AlGaAs by Terahertz Spectroscopy

Ahmer Naweed; William D. Goodhue; Vinod M. Menon; William J. Gorveatt; Robert Giles; Jerry Waldman

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
Technical Digest (CD) (Optica Publishing Group, 2006),
paper JTuD17

Probing Impurity Migration Effects in Si-Doped AlGaAs by Terahertz Spectroscopy

Ahmer Naweed, William D. Goodhue, Vinod M. Menon, William J. Gorveatt, Robert Giles, and Jerry Waldman

Quantum Electronics and Laser Science Conference 2006

Long Beach, California United States
21–26 May 2006
ISBN: 1-55752-813-6

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Joint CLEO/QELS Poster Session I (JTuD)

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A. Naweed, W. D. Goodhue, V. M. Menon, W. J. Gorveatt, R. Giles, and J. Waldman, "Probing Impurity Migration Effects in Si-Doped AlGaAs by Terahertz Spectroscopy," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optica Publishing Group, 2006), paper JTuD17.

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Abstract

Using terahertz magneto-photoconductive spectroscopy, we investigate impurity migration effects in barrier-doped GaAs/AlGaAs quantum wells. A new segregation decay rate for Si impurities in AlGaAs is determined for samples fabricated at low epitaxial growth temperature.

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