Abstract
Epitaxial CeBiIG and CeYIG films were grown on (100)-oriented Gd3Ga5O12 substrates by pulse laser deposition. We achieved strong FR of 0.65 deg/µm and 0.52 deg/µm at 1.55 µm for epitaxial CeBiIG and CeYIG films, respectively.
© 2012 Optical Society of America
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