Abstract
Since most direct gap semiconductors have bandgaps in the infra-red, there is considerable effort in extending the operation of devices into the visible. In this work we show how indirect gap AlGaAs/AlAs quantum wells (QWs) can be suitable for the fabrication of reflection modulators and LEDs. We demonstrate a modulator with a 30% reflectivity change and a room temperature LED.
© 1993 Optical Society of America
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