Abstract
In the recent paper 1 semiclassical treatment of semiconductor laser (SL) with dispersive loss element (DLE) inside the cavity was presented. In SL with frequency dependent photon life time τp (, φ is the slowly varying phase of an electromagnetic field) phase and amplitude noises were shown to be decreased (1 + Cα)2 / (l +α2) and (1 + Cα)2 / (1 + C2) (α is the linewidth enhancement factor) times, respectively, comparing to the conventional SL (C=0). At the same time, he low frequency portion of current modulation response is unchanged. Possible values of parameter C 1 can be ~10 and some dozens in the case of atomic absorption cell and the weak coupling of SL to an external high-finesse Fabry-Perot etalon, respectively.
© 1993 Optical Society of America
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