Abstract
Data will be presented characterizing a microcavity laser structure which uses a half- wavelength cavity (HWC) spacer layer surrounding a single quantum well (QW) active region. Initial results demonstrate a continuous-wave (CW) room-temperature lasing threshold current of 91μA for a 2μm device (Jth=2.3kA/cm2), and 220μA for an 8μm device (Jth=344A/cm2). The HWC laser, as illustrated in Fig.1, uses 26 pairs of n- AlAs/GaAs distributed Bragg reflectors (DBRs) for the bottom mirror, a half-wavelength cavity spacer composed of an n-AlAs layer beneath the QW and p-AlAs layer on top, and a p-GaAs cap layer.
© 1995 Optical Society of America
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