Abstract
We have shown previously the benefits of strained layer structures for low threshold current, high quantum efficiency, long wavelength lasers with high To [1]. In this paper we briefly review the benefits and consider the influence of strain on the relaxation oscillation frequency fr and the linewidth enhancement factor α. We find the relaxation oscillation frequency is enhanced in a strained layer laser, while α is reduced by comparison with a lattice-matched quantum well laser.
© 1989 Optical Society of America
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