Abstract
The use of the graded barrier quantum well laser stucture to obtain low threshold current density devices has been well established.1,2 However, little work has been performed on the integration of this structure into index-guided devices, particularly in the visible region. Laser structures which rely exclusively on quantum size effects have been operated as laser diodes with emission wavelengths as short as 7040 Å for devices with 13 Å quantum wells.3 However, the growth of smaller well sizes to obtain higher energy emission is difficult to achieve. The use of all binary AlAs/GaAs quantum well structures eliminates difficulties assiciated with alloy clustering and allows high energy emission to be obtained without having to utilize extremely small quantum well widths.4 In these structures, short wavelength emission can be obtained, without the need for AlxGa1-xAs, exclusively from quantum size effects in relatively wide wells (Lz>20Å) due to the large AlAs potential barrier heights on either side of the quantum well.
© 1987 Optical Society of America
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