Abstract
To design an optimized high-power semiconductor traveling wave amplifier (TWA), it is important to study the parameter dependencies of a TWA on its waveguide structure, material properties, and operating conditions. Since the degradation of the output beam profile in a broad-stripe TWA is often observed in practice, two-dimensional models employing the beam propagation method (BPM) and the effective index method have been widely used [1-2]. These models are usually based on a linearization of basic material properties. For high-power TWAs, the operating current is several times larger than the threshold current of a corresponding laser diode. Linear approximations are under these conditions no longer valid. In this paper, we consider nonlinear material properties in a self-consistent BPM model. Nonlinear gain and residual facet reflectivities are found to greatly influence the operating characteristics of the devices.
© 1995 Optical Society of America
PDF ArticleMore Like This
Wayne W. Lui, Katsuaki Magari, and Kiyoyuki Yokoyama
ThD10 Optical Amplifiers and Their Applications (OAA) 1995
S. A. Merritt, J. Singh, C. C. Lu, S. Jiang, I. Riant, A. Abdelemonem, R. A. Wilson, C. E. C. Wood, and M. Dagenais
CTuN6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993
M. M. Mihailidi, J. E. Zucker, and M. N. Khan
IThD4 Integrated Photonics Research (IPR) 1995