Electrically addressed field effect transistor self electro-optic effect device (FET-SEED) amplified differential modulator array.

A. L. Lentine; L. M. F. Chirovsky; L. A. D’Asaro; E. J. Laskowski; S. S. Pei; M. W. Focht; J. M. Freund; G. D. Guth; R. E. Leibenguth; L. E. Smith; T. K. Woodward

doi:10.1364/SLMA.1993.SMD.2

Spatial Light Modulators and Applications
Technical Digest Series (Optica Publishing Group, 1993),
paper SMD.2
•https://doi.org/10.1364/SLMA.1993.SMD.2

Electrically addressed field effect transistor self electro-optic effect device (FET-SEED) amplified differential modulator array.

A. L. Lentine, L. M. F. Chirovsky, L. A. D’Asaro, E. J. Laskowski, S. S. Pei, M. W. Focht, J. M. Freund, G. D. Guth, R. E. Leibenguth, L. E. Smith, and T. K. Woodward

Spatial Light Modulators and Applications 1993

California United States
15–17 March 1993
ISBN:

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A. L. Lentine, L. M. F. Chirovsky, L. A. D’Asaro, E. J. Laskowski, S. S. Pei, M. W. Focht, J. M. Freund, G. D. Guth, R. E. Leibenguth, L. E. Smith, and T. K. Woodward, "Electrically addressed field effect transistor self electro-optic effect device (FET-SEED) amplified differential modulator array.," in Spatial Light Modulators and Applications, Technical Digest Series (Optica Publishing Group, 1993), paper SMD.2.

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Abstract

The integration of Gallium Arsenide field effect transistors (GaAs - FETs) and multiple quantum well modulators is an exciting advancement in the area of optical interconnections [1-3].

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