Nano-selective area growth of InGaAs/InP using CBr4 in-situ etching

N. Kuznetsova; E. Semenova; S. Kadkhodazadeh; M. Schubert; M. Schubert; K. Yvind

doi:10.1364/ANIC.2012.JTu5A.12

Advanced Photonics Congress
OSA Technical Digest (online) (Optica Publishing Group, 2012),
paper JTu5A.12
•https://doi.org/10.1364/ANIC.2012.JTu5A.12

Nano-selective area growth of InGaAs/InP using CBr₄ in-situ etching

N. Kuznetsova, E. Semenova, S. Kadkhodazadeh, M. Schubert, and K. Yvind

Specialty Optical Fibers 2012

Colorado Springs, Colorado United States
17–20 June 2012
ISBN: 978-1-55752-946-6

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Joint Poster Session II (JTu5A)

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N. Kuznetsova, E. Semenova, S. Kadkhodazadeh, M. Schubert, and K. Yvind, "Nano-selective area growth of InGaAs/InP using CBr4 in-situ etching," in Advanced Photonics Congress, OSA Technical Digest (online) (Optica Publishing Group, 2012), paper JTu5A.12.

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Abstract

We are investigating the conditions for nano-patterned selective area epitaxial growth using e-beam lithography on HSQ resist and in-situ etching in the MOVPE reactor.

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