Abstract
GaInAsSb quaternary alloy, compound III-V semiconductors are investigated for broadband, high-brightness light emitters and sensitive detector photodiodes spanning 2.0-2.5 ums, a wavelength region of interest for optical chemical sensing of a variety of biomolecules such as glucose, lactate, and urea. Growth of GaInAsSb quaternary alloys across the compositional range are investigated by molecular beam epitaxy. It is found that even the most thermodynamically unstable alloys can be grown epitaxially under nonequilibrium conditions, and through the use of strain. Results of superluminescent and cascaded light emitting diodes, and detector photodiodes fabricated from these materials are presented.
© 2013 Optical Society of America
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