Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si Substrate for Modulators

Xiaochi Chen; Yiwen Rong; Yijie Huo; Ed Fei; Xi Liu; Theodore I. Kamins; James S. Harris

doi:10.1364/SUMSESSION.2011.Th23

International Summer Session: Lasers and Their Applications
(Optica Publishing Group, 2011),
paper Th23
•https://doi.org/10.1364/SUMSESSION.2011.Th23

Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si Substrate for Modulators

Xiaochi Chen, Yiwen Rong, Yijie Huo, Ed Fei, Xi Liu, Theodore I. Kamins, and James S. Harris

CIOMP-OSA Summer Session: Lasers and Their Applications 2011

Changchun China
31 July–5 August 2011
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X. Chen, Y. Rong, Y. Huo, E. Fei, X. Liu, T. I. Kamins, and J. S. Harris, "Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si Substrate for Modulators," in International Summer Session: Lasers and Their Applications, (Optica Publishing Group, 2011), paper Th23.

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Abstract

We investigate the growth and optical characterization of Ge/SiGe quantum wells on silicon substrate to exploit its strong quantum-confined Stark effect (QCSE) for electroabsorption modulator in long wavelength regime. Further, we design and fabricate devices based on this approach and investigate the high-speed modulation performance of the device.

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