Solitary vs Gaussian Waves Gating of InGaAs/InP Avalanche Photodiode to Stabilize Dark Count Rate as Excess Voltage Increases

Ahmad S. Azzahrani; Ahmed C. Kadhim; Susan K. Earles; Muhammad Riaz

doi:10.1364/TRANSLATIONAL.2018.JTh3A.35

Biophotonics Congress: Biomedical Optics Congress 2018 (Microscopy/Translational/Brain/OTS)
OSA Technical Digest (Optica Publishing Group, 2018),
paper JTh3A.35
•https://doi.org/10.1364/TRANSLATIONAL.2018.JTh3A.35

Solitary vs Gaussian Waves Gating of InGaAs/InP Avalanche Photodiode to Stabilize Dark Count Rate as Excess Voltage Increases

Ahmad S. Azzahrani, Ahmed C. Kadhim, Susan K. Earles, and Muhammad Riaz

Clinical and Translational Biophotonics 2018

Hollywood, Florida United States
3–6 April 2018
ISBN: 978-1-943580-41-5

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Poster Thursday (JTh3A)

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A. S. Azzahrani, A. C. Kadhim, S. K. Earles, and M. Riaz, "Solitary vs Gaussian Waves Gating of InGaAs/InP Avalanche Photodiode to Stabilize Dark Count Rate as Excess Voltage Increases," in Biophotonics Congress: Biomedical Optics Congress 2018 (Microscopy/Translational/Brain/OTS), OSA Technical Digest (Optica Publishing Group, 2018), paper JTh3A.35.

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Abstract

A mathematical model for dark count rate of soliton gated InGaAs/InP SPAD is developed. Results are compared with published experimental counts of Gaussian gating. Simulation results show DCR is not affected by increasing V_EX.

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