Abstract
Resonant tunnel diodes(RTD) are currently the widest bandwidth semiconductor devices [1,2], useful for high frequency oscillators and picosecond pulse generators. 712GHz oscillators [2] and pulse generators [3] fabricated with ~ 1.0TH.z bandwidth InAs/AlSb RTDs, are some examples of high speed RTD applications. Here, we report the fabrication, DC, and microwave characteristics of AlAs/In0.53Ga0.47.As/InP Schottky-collector resonant tunnel diodes (SRTDs) with deep submicron Schottky collectors and an estimated maximum frequency of oscillation fmax = 2.2TH z. Monolithic integration of severa1 SRTDs into sub-millimeter wave quasi optical oscillator arrays and for traveling wave deep sub-picosecond pulse generators is feasible with this device technology.
© 1995 Optical Society of America
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