Abstract
Experimental measurements and 2-dimensional computer simulations illustrate that the use of a low temperature grown GaAs (LT GaAs) buffer layer in GaAs FETs reduces ion-induced charge collection by two orders of magnitude. A similar reduction in collected charge is observed for above-band-gap pulsed laser excitation, in which the bulk of the carriers are deposited above the LT GaAs buffer layer, reiterating the central role of charge-enhancement (gain) mechanisms in determining the single-event vulnerability of GaAs FET-based circuitry.
© 1997 Optical Society of America
PDF ArticleMore Like This
A. I. Lobad and P. M. Fauchet
QTuE22 Quantum Electronics and Laser Science Conference (CLEO:FS) 1997
T. S. Sosnowski, T. B. Norris, H. H. Wang, P. Grenier, J. F. Whitaker, and C. Y. Sung
UG8 Ultrafast Electronics and Optoelectronics (UEO) 1997
J. Allam, K. Ogawa, A.P. Heberle, N. de B. Baynes, J.R.A. Cleaver, T. Mishima, and I. Ohbu
UTUC4 Ultrafast Electronics and Optoelectronics (UEO) 1995