Abstract
The photoluminescence decay of an excited semiconductor depends on a number of factors: 1. The intensity and penetration depth of the exciting light. 2. Diffusion of photogenerated electron-hole (e-h) pairs into the semiconductor bulk. 3. Kinetics of band-to-band radiative recombination and non radiative recombination of e-h pairs at bulk or surface centers. 4. Photoluminescence reabsorption.
© 1984 Optical Society of America
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