Abstract
Almost instantaneous hole spin relaxation has been often assumed in semiconductor structures [1]. On the other hand, theoretical models predict a slowing down of the hole spin relaxation time in GaAs/AlGaAs quantum wells due to the size quantization along the growth axis [2].
© 1992 The Author(s)
PDF ArticleMore Like This
M. Bender, M. Oestreich, and W.W. Rühle
QFC6 Quantum Electronics and Laser Science Conference (CLEO:FS) 2002
Hailin Wang, Min Jiang, R. Merlin, and Duncan G Steel
QTuB3 Quantum Electronics and Laser Science Conference (CLEO:FS) 1992
R. S. Britton, T. Grevatt, A. Malinowski, and R. T. Harley
QThG22 International Quantum Electronics Conference (IQEC) 1998