Abstract
Crystalline GaAs grown at low-temperature (LT-GaAs) by MBE has been shown to have novel device applications, such as in high-picosecond photoconductive switches and in MESFETs because it can be prepared as a semi-insulating material with reasonably high carrier mobility and a carrier lifetime of less than one picosecond (1). Because the carrier lifetime is comparable to the carrier cooling time (typically 1 psec at T = 290 K), LT-GaAs is an interesting material in which to study highly non-equilibrium carrier and, perhaps even, phonon distributions in a semiconductor.
© 1992 The Author(s)
PDF ArticleMore Like This
X. Q. Zhou, H. M. van Driel, W. W. Rutile, J. Kuhl, and K. Ploog
QThE4 Quantum Electronics and Laser Science Conference (CLEO:FS) 1992
X. Q. Zhou, H. M. van Driel, R. Devlen, W. W. Rühle, J. Kuhl, and K. Ploog
PTh070 International Quantum Electronics Conference (IQEC) 1992
T. B. Morris, W. Sha, W. J. Schaff, and X. J. Song
CTuG4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991