Abstract
We report the first picosecond luminescence measurements of hot carrier cooling rates in the II-VI semiconductor CdSe. We find that the carrier energy loss rates reduce with the excitation density no. The rates are much smaller than those expected in a simple theory of carrier energy transfer to the lattice via various phonon emission processes. At no = 8 × 1017 cm−3 for example, the rates are reduced by as much as factor of 75. We present a detailed comparison with the theory including the effects of hot phonons and all relevant energy loss mechanisms. We find that a large, density dependent value of 6 to 9 ps for the optical phonon lifetime (at 8 K) is required to explain the results.
© 1994 Optical Society of America
PDF ArticleMore Like This
Arvind S. Vengurlekar, S. S. Prabhu, S. K. Roy, and Jagdeep Shah
QWC63 International Quantum Electronics Conference (IQEC) 1994
A. S. Vengurlekar, S. S. Prabhu, S. K. Roy, and Jagdeep Shah
QThG28 Quantum Electronics and Laser Science Conference (CLEO:FS) 1995
X. Q. Zhou, H. M. van Driel, W. W. Rühle, and K. Ploog
QWG4 Quantum Electronics and Laser Science Conference (CLEO:FS) 1993