Abstract
THz radiation from several kinds of semiconductors had been reported from many groups.1~2) The emitters like photoconductive or Bow-tie antennas had been fabricated on S. I. GaAs and LT GaAs3). The receiver had been reported from many methods such as dipole detection, E-O sampling, Bolometer etc. Dipole detection has the advantage of large responsively. Comparison of photoconductive antennas between LT GaAs and S. I. GaAs had been characterized from M. Tani et al3). Arsenic-ion-implant GaAs (GaAs: As+) had been reported with ultrafst carrier lifetime that is similar as LT GaAs4). In this paper, we will introduce the temporal difference between THz radiation from GaAs: As+ and S.I. GaAs fabricated dipole antennas with variant bias field and optical excitation power.
© 2002 Optical Society of America
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