Loss analysis of a grating coupler for single-mode fiber coupling into an SOI waveguide

Ziyu Cai

doi:10.1364/AO.517141

Applied Optics
Vol. 63,
Issue 14,
pp. 3763-3769
(2024)
•https://doi.org/10.1364/AO.517141

Loss analysis of a grating coupler for single-mode fiber coupling into an SOI waveguide

Ziyu Cai

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Ziyu Cai, "Loss analysis of a grating coupler for single-mode fiber coupling into an SOI waveguide," Appl. Opt. 63, 3763-3769 (2024)

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Abstract

Silicon-on-insulator (SOI) technology is widely used in silicon photonic integrated circuits. How to improve the coupling efficiency of the light coupling in free space and optical fibers into waveguides on SOI must be discussed. Grating coupling is a commonly used and highly efficient coupling method. This article discusses the causes of loss in grating couplers from three aspects: transmission, reflection, and mode mismatch, and proposes corresponding loss reduction solutions. The coupling efficiency of Si and SiN grating couplers optimized according to the loss reduction scheme has been improved by 25% and 45%, respectively.

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Material	Si	SiN
Period	440 nm	960 nm
Duty cycle	50%	50%
Thickness	220 nm	320 nm
Etching depth	110 µm	320 µm
Incident angle	20°	17°
Thickness of BOX layer	2 µm	2.22 µm

Grating Coupler	$λ$	Coupling Efficiency of the Simulation	Bandwidth	Material	Coupling Efficiency Enhanced Structure	Etch Type
This work	1064 nm	77%	33 nm	Si	Bottom reflector	Shallow
This work	1064 nm	73%	53 nm	SiN	Bottom reflector	Full
					Taper thickens downward
Ref. [1]	850 nm	62%	29 nm	Si	–	Shadow
Ref. [2]	850 nm	11%	12 nm (1 dB)	SiN	–	Full
Ref. [4]	1547 nm	67%	47 nm	Si	Apodized design	–
Ref. [3]	1550 nm	78.5%	50 nm	Si	Apodized design	Shallow
Ref. [6]	1550 nm	58%	80 nm	Si	Arc focusing structure	Full

Material	Si	SiN
Transmission loss reduction method	Bottom Al mirror	Bottom Al mirror
Top cladding thickness	0	0
Mode mismatch loss	Incident light	Incident light moves left
reduction method	moves left	Taper thickens downward
Coupling efficiency at 1064 nm	77%	73%

Material	Si	SiN
Period	440 nm	960 nm
Duty cycle	50%	50%
Thickness	220 nm	320 nm
Etching depth	110 µm	320 µm
Incident angle	20°	17°
Thickness of BOX layer	2 µm	2.22 µm

Grating Coupler	$λ$	Coupling Efficiency of the Simulation	Bandwidth	Material	Coupling Efficiency Enhanced Structure	Etch Type
This work	1064 nm	77%	33 nm	Si	Bottom reflector	Shallow
This work	1064 nm	73%	53 nm	SiN	Bottom reflector	Full
					Taper thickens downward
Ref. [1]	850 nm	62%	29 nm	Si	–	Shadow
Ref. [2]	850 nm	11%	12 nm (1 dB)	SiN	–	Full
Ref. [4]	1547 nm	67%	47 nm	Si	Apodized design	–
Ref. [3]	1550 nm	78.5%	50 nm	Si	Apodized design	Shallow
Ref. [6]	1550 nm	58%	80 nm	Si	Arc focusing structure	Full

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Applied Optics