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E-Beam Synthesized Fast Switching TiO2/SnO2 Type-II Heterostructure Photodetector
Applied Optics- received 02/29/2024; accepted 04/17/2024; posted 04/18/2024; Doc. ID 522709
- Abstract: A fast-switching TiO2/SnO2 heterostructure thin film (TF) photodetector synthesized by electron beam evaporation technique, isanalysed in this study. The substrate utilized is n-type silicon (Si), while Gold (Au) is employed as the top electrode. To assesssample morphology and confirm elemental composition, field emission scanning electron microscopy (FESEM), energy dispersivex-ray spectroscopy (EDS), and chemical mapping were conducted. Structural characteristics were determined using X-raydiffraction (XRD) analysis. The XRD analysis confirmed the presence of various phases of TiO2 (anatase and rutile) and SnO2(rutile). UV-Vis spectroscopy revealed multiple absorption peaks, at 447 nm, 495 nm, 560 nm, and 673 nm within the visiblespectrum. The device demonstrates high detectivity (D*) of 1.737×109 Jones and a low noise equivalent power (NEP) of 0.765×10-10 W. Evaluation of the device's switching response through current-time characteristic (I-T) analysis indicates rapid switching witha rise time and fall time of 0.33s and 0.36s, respectively.