Abstract

Subject of study. In AlGaN-based deep ultraviolet laser diodes, the quantum well affects the performance in the active region. Moreover, the composition of aluminum in quantum barriers in the quantum well matters to the performance of AlGaN-based deep ultraviolet laser diodes. It might be observed effectively by looking at performance indicators like the emitted power and optical confinement factor (band diagram, carrier concentration, and stimulated recombination). Method. Two deep ultraviolet laser diode devices with a nominated wavelength of 267.5 nm are simulated and compared in this paper using the Crosslight program LASTIP. The proposed deep ultraviolet laser diode device B with a reduced Al composition in the quantum barrier is used in the active region as opposed to the reference deep ultraviolet laser diode device A. Main results. This led to an improvement in emitted output power of 0.109 W with a reduced injection current of 0.02 A and an improvement in the optical confinement factor of 19%. Practical significance. The structure of the reference device is inspired by the experimental structure. The results of the proposed device are calculated and are evaluated based on parameters such as the improved conduction band barrier height, reduced valence band barrier height, and improved stimulated recombination rate. It outperforms the deep ultraviolet laser diode for the reference device.

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