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InAs/InGaAs quantum dot lasers on multi-functional metamorphic buffer layers: erratum

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Abstract

We present an erratum to correct inadvertent errors in our paper [Opt. Express 29, 29378 (2021) [CrossRef]  ]. The corrections do not affect the main conclusion.

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Erratum

During the preparation of the manuscript for the paper [1], some data were not changed correctly when we updated the data to better performance lasers. Here the corrections are described.

The laser device described in the first paragraph of Section 3.3: Device properties was a 12 μm × 1.5 mm Fabry-Perot laser with a threshold current of 69 mA. Therefore, the 6 μm × 1.5 mm in Figure 9 should be changed to 12 μm × 1.5 mm and the 72 mA in the main text should be changed to 69 mA. The threshold current of the laser device measured in the second paragraph was 58.3 mA, and its series resistance was 11.1 Ω. Therefore, 69.2 mA and 2.4 Ω in the main text should be corrected to 58.3 mA and 11.1 Ω, respectively.

The main conclusion of our paper is the characterization of the multifunctional metamorphic buffer layer (MFMB) structure and the demonstration of the operation of a quantum dot laser. In addition, the value of the threshold current density of the MFMB laser is unchanged by the corrections. Therefore, the conclusions remain unaffected by the above errors.

Funding

New Energy and Industrial Technology Development Organization (JPNP13004).

Disclosures

The authors declare that there are no conflicts of interest related to this article.

References

1. J. Kwoen, T. Imoto, and Y. Arakawa, “InAs/InGaAs quantum dot lasers on multi-functional metamorphic buffer layers,” Opt. Express 29(18), 29378 (2021). [CrossRef]  

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