High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform: publisher&#x2019;s note

Yiding Lin; Kwang Hong Lee; Shuyu Bao; Xin Guo; Hong Wang; Jurgen Michel; Chuan Seng Tan

doi:10.1364/PRJ.6.000046

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Yiding Lin, Kwang Hong Lee, Shuyu Bao, Xin Guo, Hong Wang, Jurgen Michel, and Chuan Seng Tan, "High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform: publisher’s note," Photon. Res. 6, 46-46 (2018)

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This publisher’s note reports corrections to Eq. (1) in [Photon. Res. 5, 702 (2017) [CrossRef] ].

Equation (1) was corrected in the article [1] from

I_{dark} = {B T}^{1.5} e^{\frac{- E_{a}}{k T}} {\exp [q V / (e 2 k T)] - 1}

I_{dark} = {B T}^{1.5} e^{\frac{- E_{a}}{k T}} (e^{\frac{q V}{2 k T}} - 1)

The article [1] was corrected online as of 27 November 2017.

REFERENCE

1. Y. Lin, K. H. Lee, S. Bao, X. Guo, H. Wang, J. Michel, and C. S. Tan, “High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform,” Photon. Res. 5(6), 702–709 (2017). [CrossRef]

High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform: publisher’s note

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