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Conferences > ACPC > 2013 > AF2B > AF2B.31

1.53μ m EML Fabricated by Ion-Implantation Induced QWI with Etching Implant Buffer Layer

Liangshun Han, Song Liang, Hongliang Zhu, Can Zhang, and Wei Wang

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Abstract

We present a 1.53μ m electroabsorption modulated distributed feedback laser (EML) fabricated by ion-implantation induced quantum well intermixing (QWI) with etching implant buffer layer. This simple QWI technique can suppress band-edge shift of laser region. The EML exhibits a 18dB@-5 V DC extinction ratio.

© 2013 Optical Society of America

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