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An InP-Based High-Performance Graded Doping PIN Photodetector for Optical Communications

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Abstract

A vertical-illuminated PIN photodetector with graded energy band and graded doping is proposed. With a 350-nm-thick absorption layer, the quantum efficiency is 86%, 3-dB bandwidth is 70GHz and maximal bandwidth-efficiency product is obtained at 1550nm.

© 2013 Optical Society of America

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