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Conferences > ACPC > 2014 > ATh4I > ATh4I.1

Analysis of Recombination Mechanisms in InGaN-Based Light-Emitting Diodes from Electrical and Optical Characterizations

Dong-Soo Shin

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Abstract

Various techniques that can give useful information on the nonradiative recombination mechanisms in InGaN-based light-emitting diodes are discussed. Characterization techniques range from the simple current-voltage and light-current measurements to more sophisticated temperature-dependent methods.

© 2014 Optical Society of America

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