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Bandgap-Graded CdSxSe1-x Nanowires for High-Performance Solar Cells

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The bandgap-graded CdSxSe1-x nanowires have been used as building blocks for solar cells. Electrical transport properties were investigated in the fabricated FETs, from which the charge carrier concentration and electron mobility in the bandgap-graded single CdSxSe1-x nanowires were revealed to be 2.1 × 1017 cm−3 and 1.5 cm−2 V−1 s−1. The bandgap-graded single CdSxSe1-x nanowires demonstrate the excellent sensing capability to the visible-light. The solar cell devices showed a short-circuit current density of 13.1 mA cm−2, an open-circuit voltage of 0.21 V, a filling factor of 28 % and a conversion efficiency of 0.77 %. These initial results show a promising potential of utilizing bandgap-graded single CdSxSe1-x nanowires as novel units for nanoscale electronic and optoelectronic devices.

© 2013 Optical Society of America

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