Electron- ransport and Polaron-Models in i12Si2

Marc intermantel; Ivan iaggio; Peter Günter

doi:10.1364/APMED.1999.MC18

Advances in Photorefractive Materials, Effects and Devices
Trends in Optics and Photonics (Optica Publishing Group, 1999),
paper MC18
•https://doi.org/10.1364/APMED.1999.MC18

Electron- ransport and Polaron-Models in i₁₂Si₂

Marc intermantel, Ivan iaggio, and Peter Günter

Advances in Photorefractive Materials, Effects and Devices 1999

Elsinore Denmark
ISBN: 1-55752-606-0

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Materials and Characterization (MC)

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M. intermantel, I. iaggio, and P. Günter, "Electron- ransport and Polaron-Models in i12Si2," in Advances in Photorefractive Materials, Effects and Devices, P. Andersen, P. Johansen, H. Pedersen, P. Petersen, and M. Saffman, eds., Vol. 27 of Trends in Optics and Photonics (Optica Publishing Group, 1999), paper MC18.

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Abstract

We present temperature-dependent measurements of carrier transport in n-type Bi₁₂SiO₂₀ which were performed by holographic time-of-flight (HTOF) in diffusion mode. We measure a band mobility of photoexcited electrons of 3.5 0.4 cm²/ (Vs) at 300 K that increases monotonically to 7.5 1.3 cm²/ (Vs) as the temperature is decreased to 200 K. Our results are predicted by strong coupling polaron theory if the band mass of the electrons is chosen to be 2.0 electron masses as reported in [1, 2]. Below 200 K we observe a mobility which decreases with falling temperature.

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