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Conferences > CBGL > 1994 > PD > PD.1

Preparation of Gallium Nitride Epitaxial Films by Use of Low Energy Ion Beam Deposition

Qin Fuguang, Ren Zhizhang, Yao Zhenyu, Liu Zhikai, Huang Dading, and Wang Zhanguo

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Abstract

Gallium nitride (GaN) is a direct transition type semiconductor with a band gap of 3.39 eV at room temperature, and thus has a potential for application to some novel optoelectronic devices working in the wave band from blue to ultraviolet.

© 1994 Optical Society of America

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