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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper FB1

High speed quaternary InGaAsP/InP quantum well waveguide optical intensity modulator

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Because of their large electroabsorption effect, semiconductor multiple quantum wells (MQWs) have been considered for high speed optical modulators.1 Although initial work was performed in the GaAs/AlGaAs material system, recently large electroabsorption effects have been seen in the ternary InGaAs/lnP2 and InGaAs/lnAIAs3 systems. The fastest devices reported to date to our knowledge are a 5.3-GHz transverse device with an on/ off ratio of 1.25:1,4 and a 3.7-GHz waveguide device with an on/off ratio of 11:1.5 We report a waveguide MQW modulator made with a semiinsulating blocked planar buried heterostructure (SIPBH) with a bandwidth in excess of 9 GHz.

© 1989 Optical Society of America

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